Impedance characterization of dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene diodes: Addressing dielectric properties and trap effectsopen access
- Authors
- Cho, Hong-rae; Park, Joon Hyung; Kim, Somi; Mohanan, Kannan Udaya; Jung, Sungyeop; Kim, Chang-Hyun
- Issue Date
- May-2024
- Publisher
- AIP Publishing
- Citation
- JOURNAL OF APPLIED PHYSICS, v.135, no.17
- Journal Title
- JOURNAL OF APPLIED PHYSICS
- Volume
- 135
- Number
- 17
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/91505
- DOI
- 10.1063/5.0205973
- ISSN
- 0021-8979
1089-7550
- Abstract
- Dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) is a widely used small-molecular p-type organic semiconductor. Despite the broad availability of high-performance DNTT transistors, there is a lack of investigation into other devices based on this semiconductor. In this study, rectifying diodes with DNTT as a single transport medium are fabricated and characterized. Realizing unipolar current rectification from asymmetric metal contacts, a number of physical and electrical properties of DNTT are made accessible. Current-voltage measurement, broad-band impedance spectroscopy, drift-diffusion simulation, and equivalent-circuit modeling are combined to quantify important parameters such as dielectric constant, trap energy, and lifetime. These results provide a practical reference for the design and optimization of diverse electronic devices incorporating DNTT. (c) 2024 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license(https://creativecommons.org/licenses/by/4.0/).https://doi.org/10.1063/5.0205973
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