Trap-assisted tunneling in type II Ag2O/β-Ga2O3 self-powered solar blind photodetector
DC Field | Value | Language |
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dc.contributor.author | Labed, Madani | - |
dc.contributor.author | Kim, Kihwan | - |
dc.contributor.author | Kim, Kyung Hwan | - |
dc.contributor.author | Hong, Jeongsoo | - |
dc.contributor.author | Rim, You Seung | - |
dc.date.accessioned | 2024-06-25T12:00:19Z | - |
dc.date.available | 2024-06-25T12:00:19Z | - |
dc.date.issued | 2024-07 | - |
dc.identifier.issn | 0924-4247 | - |
dc.identifier.issn | 1873-3069 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/91664 | - |
dc.description.abstract | This study investigates a high-performance Ag2O/beta-Ga2O3 self-powered photodiode through experimental and modeling approaches. Initially, a p-type Ag2O film, with a bandgap close to 4 eV and a hole density of approximately 6.35x1018 cm-3, was fabricated using faced two-target sputtering. The conduction and valence band offsets between Ag2O and beta-Ga2O3 were determined via X-ray photoelectron spectroscopy, confirming a type II heterojunction. The device had a low on-voltage of 1.50 V and a low on-resistance of 5.40 m ohm.cm2 in the dark. Subsequent illumination at 254 nm resulted in a notably high photocurrent, responsivity, and detectivity. To confirm the role of trap-assisted tunneling in the type II Ag2O/beta-Ga2O3 heterojunction, Silvaco simulations were employed to model both the dark current and photocurrent. These simulations confirmed the prevalence of the trap-assisted tunneling mechanism, particularly through energy levels situated above the equilibrium Fermi level at the Ag2O/beta-Ga2O3 interface, as described by the Danielsson model. Understanding the transport mechanism is paramount for the development of high-performance photodetectors. By comprehending how charge carriers navigate through the device and the influence of traps on their behavior, researchers can optimize device design and fabrication processes to enhance performance. | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | Trap-assisted tunneling in type II Ag2O/β-Ga2O3 self-powered solar blind photodetector | - |
dc.type | Article | - |
dc.identifier.wosid | 001230584500001 | - |
dc.identifier.doi | 10.1016/j.sna.2024.115368 | - |
dc.identifier.bibliographicCitation | SENSORS AND ACTUATORS A-PHYSICAL, v.372 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-85190233504 | - |
dc.citation.title | SENSORS AND ACTUATORS A-PHYSICAL | - |
dc.citation.volume | 372 | - |
dc.type.docType | Article | - |
dc.publisher.location | 스위스 | - |
dc.subject.keywordAuthor | Heterojunction | - |
dc.subject.keywordAuthor | Photodetector | - |
dc.subject.keywordAuthor | XPS | - |
dc.subject.keywordAuthor | Modeling | - |
dc.subject.keywordAuthor | Traps | - |
dc.subject.keywordPlus | DIODES | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Instruments & Instrumentation | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Instruments & Instrumentation | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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