Photogating-based organic synapse electronics modulated by dielectric
DC Field | Value | Language |
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dc.contributor.author | Kang, Seungme | - |
dc.contributor.author | Kim, Minseo | - |
dc.contributor.author | Yoo, Chansik | - |
dc.contributor.author | Lim, Byeong Min | - |
dc.contributor.author | Jang, Byung Chul | - |
dc.contributor.author | Shin, Wonjun | - |
dc.contributor.author | Lee, Hong-Sub | - |
dc.contributor.author | Yoo, Hocheon | - |
dc.date.accessioned | 2024-07-18T10:00:24Z | - |
dc.date.available | 2024-07-18T10:00:24Z | - |
dc.date.issued | 2024-06 | - |
dc.identifier.issn | 1566-1199 | - |
dc.identifier.issn | 1878-5530 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/92023 | - |
dc.description.abstract | The greatest strength of photogating effect is that the current level can be adjusted by light. Research on photogating effect is still actively underway, and various factors play a role in causing photo-reaction. In general, they work in such a way that photo-generated carriers generated under certain conditions are trapped, leading to threshold voltage shifts. Here we focus on the surface environment in which photocarriers are trapped/detrapped. To analyze the difference in photo-response depending on the insulating layer of the phototransistor, we produced a DNTT TFTs with a SiO 2 dielectric and a DNTT TFTs with a TiO 2 /SiO 2 dielectric. Except for the insulating layer, the channel and source/drain electrodes use dinaphtho [2,3-b:2 ' ,3 ' - f]thieno [3,23,2-b] thiophene (DNTT) and Au. 500 nm and 600 nm irradiation allowed a gradual current rise while DNTT TFTs with a TiO 2 /SiO 2 dielectric allowed fast de-trapping. Additionally, facial recognition synapse simulation using 500 nm and 600 nm light using a DNTT TFTs with a TiO 2 /SiO 2 dielectric achieved recognition rates of over 90%. | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | ELSEVIER | - |
dc.title | Photogating-based organic synapse electronics modulated by dielectric | - |
dc.type | Article | - |
dc.identifier.wosid | 001232505400001 | - |
dc.identifier.doi | 10.1016/j.orgel.2024.107056 | - |
dc.identifier.bibliographicCitation | ORGANIC ELECTRONICS, v.129 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-85190732471 | - |
dc.citation.title | ORGANIC ELECTRONICS | - |
dc.citation.volume | 129 | - |
dc.type.docType | Article | - |
dc.publisher.location | 네델란드 | - |
dc.subject.keywordAuthor | Thin film transistor | - |
dc.subject.keywordAuthor | Organic semiconductor | - |
dc.subject.keywordAuthor | Synaptic device | - |
dc.subject.keywordAuthor | Photogating | - |
dc.subject.keywordAuthor | Optoelectronic synapse | - |
dc.subject.keywordAuthor | Neuromorphic devices | - |
dc.subject.keywordPlus | TRANSISTOR | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | NOISE | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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