Photogating-based organic synapse electronics modulated by dielectric
- Authors
- Kang, Seungme; Kim, Minseo; Yoo, Chansik; Lim, Byeong Min; Jang, Byung Chul; Shin, Wonjun; Lee, Hong-Sub; Yoo, Hocheon
- Issue Date
- Jun-2024
- Publisher
- ELSEVIER
- Keywords
- Thin film transistor; Organic semiconductor; Synaptic device; Photogating; Optoelectronic synapse; Neuromorphic devices
- Citation
- ORGANIC ELECTRONICS, v.129
- Journal Title
- ORGANIC ELECTRONICS
- Volume
- 129
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/92023
- DOI
- 10.1016/j.orgel.2024.107056
- ISSN
- 1566-1199
1878-5530
- Abstract
- The greatest strength of photogating effect is that the current level can be adjusted by light. Research on photogating effect is still actively underway, and various factors play a role in causing photo-reaction. In general, they work in such a way that photo-generated carriers generated under certain conditions are trapped, leading to threshold voltage shifts. Here we focus on the surface environment in which photocarriers are trapped/detrapped. To analyze the difference in photo-response depending on the insulating layer of the phototransistor, we produced a DNTT TFTs with a SiO 2 dielectric and a DNTT TFTs with a TiO 2 /SiO 2 dielectric. Except for the insulating layer, the channel and source/drain electrodes use dinaphtho [2,3-b:2 ' ,3 ' - f]thieno [3,23,2-b] thiophene (DNTT) and Au. 500 nm and 600 nm irradiation allowed a gradual current rise while DNTT TFTs with a TiO 2 /SiO 2 dielectric allowed fast de-trapping. Additionally, facial recognition synapse simulation using 500 nm and 600 nm light using a DNTT TFTs with a TiO 2 /SiO 2 dielectric achieved recognition rates of over 90%.
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