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FTS 장치의 자계 분포에 따라 제작된 AZO 박막의 특성Characteristic of AZO thin film deposited by facing targets sputtering with magnetic field type
- Other Titles
- Characteristic of AZO thin film deposited by facing targets sputtering with magnetic field type
- Issue Date
- 2016
- Publisher
- 한국반도체디스플레이기술학회
- Keywords
- FTS; AZO; concentration; distribution; magnetic field
- Citation
- 반도체디스플레이기술학회지, v.15, no.3, pp.30 - 34
- Journal Title
- 반도체디스플레이기술학회지
- Volume
- 15
- Number
- 3
- Start Page
- 30
- End Page
- 34
- ISSN
- 1738-2270
- Abstract
- We investigated magnetic field, discharged voltage, and as-deposited film uniformity at facing targets sputtering (FTS) system with magnetic field type: i) concentrated and ii) distributed magnetic field type. And Al doped ZnO (AZO) films were prepared at two magnetic field type such as concentrated magnetic field type and distributed magnetic field type, respectively. Discharge voltage at the distribution type is lower than concentration type due to low magnetic flux (middle magnetic flux: Concentration 1200 G and Distribution 600 G). The films deposited at the distributed magnetic field were more uniform than concentration type. All of prepared AZO films had a resistivity of under 10-4 [Ω•cm] and a transmittance of more than 85 % in the visible range.
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Collections - IT융합대학 > 전기공학과 > 1. Journal Articles
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Related Researcher
- Kim, Kyung Hwan
- College of IT Convergence (Department of Electrical Engineering)