Effects of conducting defects on resistive switching characteristics of SiNx-based resistive random-access memory with MIS structure
DC Field | Value | Language |
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dc.contributor.author | Kim, Sungjun | - |
dc.contributor.author | Cho, Seongjae | - |
dc.contributor.author | Ryoo, Kyung-Chang | - |
dc.contributor.author | Park, Byung-Gook | - |
dc.date.available | 2020-02-28T07:43:28Z | - |
dc.date.created | 2020-02-06 | - |
dc.date.issued | 2015-11 | - |
dc.identifier.issn | 2166-2746 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/9958 | - |
dc.description.abstract | In this work, the effects of conducting defects on resistive switching characteristics of SiNx-based resistive random-access memory (RRAM) have been investigated. Two types of RRAM devices having metal-insulator-silicon layer configuration were fabricated. One is the device with SiNx as the resistive switching layer deposited by plasma-enhanced chemical vapor deposition (PECVD), and the other has the SiNx layer prepared by low-pressure chemical vapor deposition (LPCVD). The device cell deposited by LPCVD (LP-SiNx cell afterward) demonstrated superior uniformity of switching parameters and better endurance cycles compared with the device cell deposited by PECVD (PE-SiNx cell afterward). (C) 2015 American Vacuum Society. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.relation.isPartOf | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.subject | SILICON-NITRIDE | - |
dc.title | Effects of conducting defects on resistive switching characteristics of SiNx-based resistive random-access memory with MIS structure | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000366055600071 | - |
dc.identifier.doi | 10.1116/1.4931946 | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.33, no.6 | - |
dc.identifier.scopusid | 2-s2.0-84942915360 | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.volume | 33 | - |
dc.citation.number | 6 | - |
dc.contributor.affiliatedAuthor | Cho, Seongjae | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | SILICON-NITRIDE | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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