Effects of conducting defects on resistive switching characteristics of SiNx-based resistive random-access memory with MIS structure
- Authors
- Kim, Sungjun; Cho, Seongjae; Ryoo, Kyung-Chang; Park, Byung-Gook
- Issue Date
- Nov-2015
- Publisher
- A V S AMER INST PHYSICS
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.33, no.6
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
- Volume
- 33
- Number
- 6
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/9958
- DOI
- 10.1116/1.4931946
- ISSN
- 2166-2746
- Abstract
- In this work, the effects of conducting defects on resistive switching characteristics of SiNx-based resistive random-access memory (RRAM) have been investigated. Two types of RRAM devices having metal-insulator-silicon layer configuration were fabricated. One is the device with SiNx as the resistive switching layer deposited by plasma-enhanced chemical vapor deposition (PECVD), and the other has the SiNx layer prepared by low-pressure chemical vapor deposition (LPCVD). The device cell deposited by LPCVD (LP-SiNx cell afterward) demonstrated superior uniformity of switching parameters and better endurance cycles compared with the device cell deposited by PECVD (PE-SiNx cell afterward). (C) 2015 American Vacuum Society.
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