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SCIESCOPUS
A six-level ferroelectric storage cell based on a bidirectional imprint fieldGo to Link

Kim, Chaeheon; Hwang, Junghyeon; Shin, Hunbeom; Ahn, Jinho; Jeon, Sanghun

ArticleIssue Date2024CitationJournal of Materials Chemistry C, v.12, no.37, pp 15188 - 15200PublisherRoyal Society of Chemistry
SCIESCOPUS
An ultra-thin InO interlayer as an oxygen reservoir for defect passivation and enhanced ferroelectricity in hafnia devicesGo to Link

Hwang, Junghyeon; Kim, Chaeheon; Ahn, Jinho; Jeon, Sanghun

ArticleIssue Date2025CitationJOURNAL OF MATERIALS CHEMISTRY C, v.13, no.48, pp 23819 - 23830PublisherROYAL SOC CHEMISTRY
SCIESCOPUS
Damage mitigation as a strategy to achieve high ferroelectricity and reliability in hafnia for random-access-memoryGo to Link

Hwang, Junghyeon; Shin, Hunbeom; Kim, Chaeheon; Ahn, Jinho; Jeon, Sanghun

ArticleIssue Date2024CitationJournal of Materials Chemistry C, v.13, no.1, pp 214 - 229PublisherRoyal Society of Chemistry
SCIESCOPUSKCI
Enhanced performance of hafnia self-rectifying ferroelectric tunnel junctions at cryogenic temperaturesGo to Linkopen access

Hwang, Junghyeon; Kim, Chaeheon; Ahn, Jinho; Jeon, Sanghun

ArticleIssue Date2024CitationNano Convergence, v.11, no.1, pp 1 - 9Publisher나노기술연구협의회
SCIESCOPUS
Flexible Artificial Mechanoreceptor Based on Microwave Annealed Morphotropic Phase Boundary of HfxZr1-xO2 Thin FilmGo to Linkopen access

Jung, Minhyun; Kim, Seungyeob; Hwang, Junghyeon; Kim, Hye Jin; Kim, Yunjeong; Ahn, Jinho; Jeon, Sanghun

ArticleIssue Date2024CitationAdvanced Electronic Materials, v.10, no.2, pp 1 - 9PublisherWiley-VCH Verlag
SCIESCOPUS
Interface engineering of oxidized Mo electrodes for imprint stability and enhanced endurance in hafnia-based ferroelectric devicesGo to Link

Hwang, Junghyeon; Kim, Chaeheon; Kang, Geonhyeong; Kim, Yongsu; Ahn, Jinho; Jeon, Sanghun

ArticleIssue Date2025CitationJOURNAL OF MATERIALS CHEMISTRY C, v.13, no.47, pp 23570 - 23576PublisherROYAL SOC CHEMISTRY
SCOPUS
Low-Damage Processed and High-Pressure Annealed High-k Hafnium Zirconium Oxide Capacitors near Morphotropic Phase Boundary with Record-Low EOT of 2.4Å & high-k of 70 for DRAM Technology

Gaddam, Venkateswarlu; Hwang, Junghyeon; Shin, Hunbeom; Kim, Chaeheon; Kim, Giuk; Kim, Hyung-Jun; Lee, Jooho; Kim, Hyun-Cheol; Park, Bumsu; Lim, Suhwan, et al.

ArticleIssue Date2024CitationDigest of Technical Papers - Symposium on VLSI Technology, pp 1 - 2
SCIESCOPUS
Monolithically Integrated Complementary Ferroelectric FET XNOR Synapse for the Binary Neural NetworkGo to Link

Hwang, Junghyeon; Joh, Hongrae; Kim, Chaeheon; Ahn, Jinho; Jeon, Sanghun

ArticleIssue Date2024CitationACS Applied Materials & Interfaces, v.16, no.2, pp 2467 - 2476PublisherAmerican Chemical Society
SCIESCOPUS
Novel strategies for low-voltage NAND flash memory with negative capacitance effect

Kim, Giuk; Kim, Taeho; Lee, Sangho; Hwang, Junghyeon; Jung, Minhyun; Ahn, Jinho; Jeon, Sanghun

ArticleIssue Date2024CitationJapanese Journal of Applied Physics, v.63, no.5, pp 1 - 5PublisherIOP Publishing Ltd
SCIESCOPUS
The Effect of Ferroelectric/Dielectric Capacitance Ratio on Short-Term Retention Characteristics of MFMIS FeFETGo to Linkopen access

Hwang, Junghyeon; Kim, Giuk; Joh, Hongrae; Ahn, Jinho; Jeon, Sanghun

ArticleIssue Date2024CitationIEEE Journal of the Electron Devices Society, v.12, pp 988 - 992PublisherInstitute of Electrical and Electronics Engineers Inc.
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