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Imprinted Antiferroelectric with Low Damage Process for High Performance Negative Capacitance NAND Flash MemoryGo to Link

Lee, Sangho; Kim, Giuk; Nam, Yunseok; Jeong, Yeongseok; Kim, Taeho; Shin, Hunbeom; Lee, Sangmok; Ahn, Jinho; Jeon, Sanghun

ArticleIssue Date2025CitationIEEE Electron Device Letters, v.46, no.4, pp 572 - 575PublisherInstitute of Electrical and Electronics Engineers
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