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Analog Synaptic Transistor with Al-Doped HfO2Ferroelectric Thin Film

Kim, Duho; Jeon, Yu-Rim; Ku, Boncheol; Chung, Chulwon; Kim, Tae Heun; Yang, Sangheok; Won, Uiyeon; Jeong, Taeho; Choi, Changhwan

ArticleIssue Date2021CitationACS APPLIED MATERIALS & INTERFACES, v.13, no.44, pp.52743 - 52753PublisherAMER CHEMICAL SOC
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High-temperature interfacial stability of In2O3 FETs with SiO2 versus Al2O3 insulators enabling 3 nm channel scalingGo to Link

Oh, Hye-Jin; Lee, Jun-Yeoub; Beom, Jun Young; Sun, Ji Eun; Lee, Chi-Hoon; Park, Chang-Kyun; Kim, Duho; Kim, Minhyuk; Lee, Junseok; Cho, Seunghyun, et al.

ArticleIssue Date2026CitationApplied Surface Science, v.730, pp 1 - 6PublisherElsevier B.V.
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Memory characteristics of thin film transistor with catalytic metal layer induced crystallized indium-gallium-zinc-oxide (IGZO) channelGo to Linkopen access

Han, Hoonhee; Jang, Seokmin; Kim, Duho; Kim, Taeheun; Cho, Hyeoncheol; Shin, Heedam; Choi, Changhwan

ArticleIssue Date2022CitationElectronics (Switzerland), v.11, no.1, pp.1 - 12PublisherMDPI
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Synaptic Characteristics of Atomic Layer-Deposited Ferroelectric Lanthanum-Doped HfO2 (La:HfO2) and TaN-Based Artificial SynapsesGo to Link

Jeon, Yu-Rim; Kim, Duho; 구본철; Chung, Chulwon; Choi, Changhwan

ArticleIssue Date2023CitationACS Applied Materials & Interfaces, v.15, no.49, pp 57359 - 57368PublisherAmerican Chemical Society
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