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Al2O3 buffer in a ZnO thin film transistor with poly-4-vinylphenol dielectric Go to Link

Bang, Seokhwan; Lee, Seungjun; Jeon, Sunyeol; Kwon, Semyung; Jeong, Wooho; Kim, Honggyu; Shin, Iksup; Chang, Ho Jung; Park, Hyung-ho; Jeon, Hyeongtag

ArticleIssue Date2009CitationSemiconductor Science and Technology, v.24, no.2, pp 1 - 6PublisherInstitute of Physics Publishing

SCIESCOPUS

Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures Go to Link

Kim, Seokhoon; Woo, Sanghyun; Kim, Hyungchul; Jeong, Wooho; Park, Taeyong; Kim, Honggyu; Kim, Sung Bae; Jeon, Hyeongtag

ArticleIssue Date2007CitationJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, v.25, no.6, pp 1922 - 1927PublisherAmerican Institute of Physics

SCIESCOPUSKCI

Characteristics of atomic-layer-deposited HfO2 films by using a remote plasma on pre-deposited Hf metal layer Go to Link

Hong, Hyungseok; Kim, Seokhoon; Woo, Sanghyun; Kim, Hyungchul; Kim, Honggyu; Jeong, Wooho; Jeon, Sunyeol; Bang, Seokhwan; Lfe, Seungjun; Jeon, Hyeongtag

ArticleIssue Date2008CitationJournal of the Korean Physical Society, v.52, no.4, pp 1114 - 1119Publisher한국물리학회

SCIESCOPUS

Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N-2 and N2O Plasma Post-Treatments Go to Link

Kim, Hyungchul; Kim, Seokhoon; Woo, Sanghyun; Chung, Hye Yeong; Kim, Honggyu; Park, Jongsan; Jeon, Hyeongtag

ArticleIssue Date2008CitationJournal of the Electrochemical Society, v.155, no.12, pp G299 - G303PublisherElectrochemical Society, Inc.

SCISCIESCOPUS

Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition Go to Link

Kim, Yongchan; Woo, Sanghyun; Kim, Hyungchul; Lee, Jaesang; Kim, Honggyu; Lee, Hyerin; Jeona, Hyeongtag

ArticleIssue Date2010CitationJournal of Materials Research, v.25, no.10, pp 1898 - 1903PublisherMaterials Research Society

SCIESCOPUS

Epitaxial CoSi2 formation using an oxynitride buffer layer Go to Link

Lee, Jaesang; Lee, Keunwoo; Kim, Dongock; Park, Taeyong; Kim, Honggyu; Jeon, Hyeongtag

ArticleIssue Date2009CitationJournal of Materials Research, v.24, no.8, pp 2705 - 2710PublisherMaterials Research Society

SCIESCOPUS

Pt Nanocrystals Embedded in Remote Plasma Atomic-Layer-Deposited HfO2 for Nonvolatile Memory Devices Go to Link

Kim, Honggyu; Woo, Sanghyun; Kim, Hyungchul; Bang, Seokhwan; Kim, Yongchan; Choi, Daesik; Jeon, Hyeongtag

ArticleIssue Date2009CitationElectrochemical and Solid-State Letters, v.12, no.4, pp H92 - H94PublisherElectrochemical Society, Inc.

SCISCIESCOPUS

The Effects of Annealing Ambient on the Characteristics of La2O3 Films Deposited by RPALD Go to Link

Kim, Hyungchul; Woo, Sanghyun; Lee, Jaesang; Kim, Honggyu; Kim, Yongchan; Lee, Hyerin; Jeon, Hyeongtag

ArticleIssue Date2010CitationJournal of the Electrochemical Society, v.157, no.4, pp H479 - H482PublisherElectrochemical Society, Inc.

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Browsing by Kim, HonggyuAuthor

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