Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N-2 and N2O Plasma Post-Treatments
- Authors
- Kim, Hyungchul; Kim, Seokhoon; Woo, Sanghyun; Chung, Hye Yeong; Kim, Honggyu; Park, Jongsan; Jeon, Hyeongtag
- Issue Date
- Oct-2008
- Publisher
- ELECTROCHEMICAL SOC INC
- Citation
- JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.155, no.12, pp.G299 - G303
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Volume
- 155
- Number
- 12
- Start Page
- G299
- End Page
- G303
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/177823
- DOI
- 10.1149/1.2990702
- ISSN
- 0013-4651
- Abstract
- We investigated the thermal stability and physical properties of nitrided Hf-silicate after applying N-2 and N2O plasma treatments. The Hf-silicate film was created by remote-plasma atomic layer deposition using Hf[N(CH3)C2H5](4) and Si[N(CH3)](3)H as source gases and O-2 plasma as the oxidant. After rapid thermal annealing in N-2 ambient, the Hf silicate crystallized at 800 degrees C, while Hf-silicate films after the N-2 and N2O plasma treatments remained amorphous after annealing at 800 degrees C. Remote-plasma treatment of Hf-silicate resulted in a shift of the O 1s peaks to a lower binding energy. The increase in peak intensities of the Si-O-N, Si-O-Hf, and Si-O bonds at the interface after annealing was higher after N2O plasma treatment than after N-2 plasma treatment. The accumulation capacitances of an as-grown Hf-silicate metal-oxide-semiconductor structure after N-2 plasma treatment show that it has a better capacitance density (280 pF) than the same structure after N2O plasma treatment (235 pF). The equivalent oxide thickness values for the Hf-silicate films after N-2 and N2O plasma treatments are 3.36 and 3.8 nm, respectively.
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