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Pt Nanocrystals Embedded in Remote Plasma Atomic-Layer-Deposited HfO2 for Nonvolatile Memory Devices
- Authors
- Kim, Honggyu; Woo, Sanghyun; Kim, Hyungchul; Bang, Seokhwan; Kim, Yongchan; Choi, Daesik; Jeon, Hyeongtag
- Issue Date
- Jan-2009
- Publisher
- ELECTROCHEMICAL SOC INC
- Keywords
- electron beam deposition; hafnium compounds; nanostructured materials; platinum; random-access storage; rapid thermal annealing; tunnelling
- Citation
- ELECTROCHEMICAL AND SOLID STATE LETTERS, v.12, no.4, pp.H92 - H94
- Indexed
- SCIE
SCOPUS
- Journal Title
- ELECTROCHEMICAL AND SOLID STATE LETTERS
- Volume
- 12
- Number
- 4
- Start Page
- H92
- End Page
- H94
- ISSN
- 1099-0062
- Abstract
- Pt nanocrystals using HfO2 as tunneling and control layers were investigated for nonvolatile memory application. A Pt layer was deposited by electron-beam evaporation and transformed into well-separated nanocrystals by rapid thermal annealing at 700 degrees C. The fabricated Pt nanocrystals had a density of 2.1x10(12) cm(-2) and an average size of 3.7 nm. The capacitance-voltage measurements demonstrate that the nonvolatile memory with Pt nanocrystals had a memory effect with similar to 0.9 V flatband voltage shift under a gate voltage of 5 V. The device showed a competitive retention characteristic with a charge loss rate of 20% after 10(4) s.
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Related Researcher
- Jeon, Hyeongtag
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)