Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Pt Nanocrystals Embedded in Remote Plasma Atomic-Layer-Deposited HfO2 for Nonvolatile Memory Devices
- Authors
- Kim, Honggyu; Woo, Sanghyun; Kim, Hyungchul; Bang, Seokhwan; Kim, Yongchan; Choi, Daesik; Jeon, Hyeongtag
- Issue Date
- Jan-2009
- Publisher
- Electrochemical Society, Inc.
- Keywords
- electron beam deposition; hafnium compounds; nanostructured materials; platinum; random-access storage; rapid thermal annealing; tunnelling
- Citation
- Electrochemical and Solid-State Letters, v.12, no.4, pp H92 - H94
- Indexed
- SCIE
SCOPUS
- Journal Title
- Electrochemical and Solid-State Letters
- Volume
- 12
- Number
- 4
- Start Page
- H92
- End Page
- H94
- ISSN
- 1099-0062
1944-8775
- Abstract
- Pt nanocrystals using HfO2 as tunneling and control layers were investigated for nonvolatile memory application. A Pt layer was deposited by electron-beam evaporation and transformed into well-separated nanocrystals by rapid thermal annealing at 700 degrees C. The fabricated Pt nanocrystals had a density of 2.1x10(12) cm(-2) and an average size of 3.7 nm. The capacitance-voltage measurements demonstrate that the nonvolatile memory with Pt nanocrystals had a memory effect with similar to 0.9 V flatband voltage shift under a gate voltage of 5 V. The device showed a competitive retention characteristic with a charge loss rate of 20% after 10(4) s.
- Files in This Item
- Go to Link
- Appears in
Collections - 서울 공과대학 > 서울 신소재공학부 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.