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Demonstration of Ferroelectric-Gate Field-Effect Transistors with Recessed Channels Go to Link

Lee, Kitae; Kwak, Been; Kim, Sihyun; Kwon, Daewoong

ArticleIssue Date2024CitationIEEE Electron Device Letters, v.45, no.2, pp 180 - 183PublisherInstitute of Electrical and Electronics Engineers

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Optical characterization of GaN-based LED devices through spectroscopic ellipsometry Go to Link

Hong, Seokwoo; Kim, Sihyun; Kim, Hyunwoo; Song, Ickhyun; Kim, Jang Hyun; Kim, Garam

ArticleIssue Date2025CitationOptics & Laser Technology, v.184, pp 1 - 9PublisherElsevier BV

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Scaling Effects on Memory Characteristics of Ferroelectric Field-effect Transistors Go to Link

Lee, Kitae; Yim, Jiyong; Shin, Wonjun; Kim, Sihyun; Kwon, Daewoong

ArticleIssue Date2024CitationIEEE Electron Device Letters, v.45, no.5, pp 805 - 808PublisherInstitute of Electrical and Electronics Engineers

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Stacked Nanosheet Gate-All-Around Morphotropic Phase Boundary Field-Effect Transistors Go to Link open access

Kim, Sihyun; Kim, Hyun-Min; Kwon, Ki-Ryun; Kwon, Daewoong

ArticleIssue Date2025CitationAdvanced Science, v.12, no.18, pp 1 - 9PublisherWiley-VCH Verlag

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Suppression of Gate-Induced-Drain-Leakage Utilizing Local Polarization in Ferroelectric-Gate Field-Effect Transistors for DRAM Applications Go to Link

Kwak, Been; Lee, Kitae; Kim, Sihyun; Kwon, Daewoong

ArticleIssue Date2024CitationIEEE Electron Device Letters, v.45, no.5, pp 813 - 816PublisherInstitute of Electrical and Electronics Engineers

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Browsing by Kim, SihyunAuthor

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