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Postannealing effect on pseudobilayer HfO2/HfSixOy/Si gate oxides formed by an inductively coupled sputtering processGo to Link

Choi, Won Joon; Lee, Eun Joung; Lee, Jong Hyun; Yang, Jung Yup; Do, Young Ho; Hong, Jin Pyo

ArticleIssue Date2006CitationJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, v.24, no.4, pp 1818 - 1821PublisherAmerican Institute of Physics
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