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SCIESCOPUS
Experimental Analysis on the Interaction Between Interface Trap Charges and Polarization on the Memory Window of Metal-Ferroelectric-Insulator-Si (MFIS) FeFETGo to Link

Kim, Giuk; Choi, Hyojun; Lee, Sangho; Shin, Hunbeom; Lee, Sangmok; Nam, Yunseok; Kang, Hyunjun; Shin, Seokjoong; Kim, Hoon; Lim, Youngjin, et al.

ArticleIssue Date2024CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.71, no.11, pp 6627 - 6632PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
First Demonstration of Thermally Stable Zr:HfO2 Ferroelectrics Via Inserting AlN InterlayerGo to Link

Lee, Sangmok; Kim, Giuk; Lee, Sangho; Shin, Hunbeom; Lim, Youngjin; Kim, Kang; Kim, Do-Hyung; Oh, Il-Kwon; Ko Park, Sang-Hee; Ahn, Jinho, et al.

ArticleIssue Date2024CitationIEEE ELECTRON DEVICE LETTERS, v.45, no.9, pp 1578 - 1581PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS IN
SCIESCOPUS
Kinetically Stabilized Hafnia Ferroelectric of Al-Doped HfO2 Film by Fast Ramping and Fast Cooling ProcessGo to Link

Zhang, Lingwei; Kim, Giuk; Lee, Sangho; Shin, Hunbeom; Lim, Youngjin; Kim, Kang; Oh, Il-Kwon; Park, Sang-Hee Ko; Ahn, Jinho; Jeon, Sanghun

ArticleIssue Date2024CitationIEEE Transactions on Electron Devices, v.71, no.12, pp 7398 - 7404PublisherInstitute of Electrical and Electronics Engineers
SCIESCOPUS
Low-Temperature (450 °C) Crystallization of Al:HfO2 Ferroelectric Thin Films Enabled by Microwave Annealing ProcessGo to Link

Kim, Giuk; Zhang, Lingwei; Lee, Sangho; Shin, Hunbeom; Lim, Youngjin; Kim, Kang; Oh, Il-Kwon; Park, Sang-Hee Ko; Ahn, Jinho; Jeon, Sanghun

ArticleIssue Date2025CitationIEEE Transactions on Electron Devices, v.72, no.10, pp 5538 - 5543PublisherInstitute of Electrical and Electronics Engineers
SCIESCOPUS
Optimizing De-trap Pulses in Gate-injection Type Ferroelectric NAND Cells to Minimize Read After Write Delay IssueGo to Link

Kim, Giuk; Choi, Hyojun; Cho, Hongrae; Lee, Sangho; Shin, Hunbeom; Kang, Hyunjun; Kim, Hoon; Shin, Seokjoong; Park, Seonjae; Kwon, Sunseong, et al.

ArticleIssue Date2024CitationIEEE Electron Device Letters, v.45, no.12, pp 2359 - 2362PublisherInstitute of Electrical and Electronics Engineers
SCIESCOPUS
Positive Interaction between Charge Trapping and Polarization Switching in Metal-Interlayer-Ferroelectric-Interlayer-Silicon (MIFIS) Ferroelectric Field-Effect TransistorGo to Link

Choi, Hyojun; Kim, Giuk; Lee, Sangho; Shin, Hunbeom; Lim, Youngjin; Kim, Kang; Kim, Do-Hyung; Oh, Il-Kwon; Park, Sang-Hee Ko; Ahn, Jinho, et al.

ArticleIssue Date2024CitationIEEE Electron Device Letters, v.45, no.12, pp 2351 - 2354PublisherInstitute of Electrical and Electronics Engineers
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