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SCIESCOPUS
c-Axis Aligned 3 nm Thick In2O3 Crystal Using New Liquid DBADMIn Precursor for Highly Scaled FET Beyond the Mobility-Stability Trade-off

Choi, Su-Hwan; Ryu, Seong-Hwan; Kim, Dong-Gyu; Kwag, Jae-Hyeok; Yeon, Changbong; Jung, Jaesun; Park, Young-Soo; Park, Jin-Seong

ArticleIssue Date2024CitationNano Letters, v.24, no.4, pp 1324 - 1331PublisherAmerican Chemical Society
SCIESCOPUS
C-Axis Aligned Composite InZnO via Thermal Atomic Layer Deposition for 3D Nanostructured SemiconductorGo to Link

Kim, Hye-Mi; Ryu, Seong-Hwan; Kim, Sangwook; Lee, Kwang-Hee; Park, Jin-Seong

ArticleIssue Date2024CitationACS Applied Materials & Interfaces, v.16, no.12, pp 14995 - 15003PublisherAmerican Chemical Society
SCIESCOPUS
Cocktail Precursor Approach for Homogeneous ALD InGaO Film Growth Overcoming Limits of Mobility–Reliability Trade-Off in Oxide Semiconductors

Ryu, Seong-Hwan; Kim, Dong-Gyu; Koo, Haklim; Yeom, Kyuhyun; Ryu, Dae Won; Park, Chang-Kyun; Park, Jin-Seong

ArticleIssue Date2026CitationACS Applied Materials and Interfaces, v.18, no.4, pp 7148 - 7158PublisherAmerican Chemical Society
SCIESCOPUS
Facile and Stable n(+) Doping Process Via Simultaneous Ultraviolet and Thermal Energy for Coplanar ALD-IGZO Thin-Film Transistors

Kim, Dong-Gyu; Ryu, Seong-Hwan; Jeong, Hyun-Jun; Park, Jin-Seong

ArticleIssue Date2021CitationACS APPLIED ELECTRONIC MATERIALS, v.3, no.8, pp.3530 - 3537PublisherAMER CHEMICAL SOC
SCIESCOPUS
High Mobility and GIDL Erase-Compatible Characteristics in Hybrid Channel (Poly-Si/IGO) for Ultrahigh 3D NAND Flash Memory ApplicationsGo to Link

Sim, Jae-Min; Choi, Su-Hwan; Ryu, Seong-Hwan; Song, Ji-Ho; Park, Jin-Seong; Song, Yun-Heub

ArticleIssue Date2024CitationACS Applied Electronic Materials, v.6, no.2, pp 1087 - 1093PublisherAMER CHEMICAL SOC
SCIESCOPUS
High-Temperature Stable Amorphous Sn-Rich InSnGaO Thin Films Fabricated Via Atomic Layer Deposition for Next-Generation Dynamic Random-Access Memory ApplicationsGo to Link

Ryu, Seong-Hwan; Kim, Hye-Mi; Lee, Kwang-Hee; Sung, Ha-Jun; Yang, Jee-Eun; Kim, Sangwook; Park, Jin-Seong

ArticleIssue Date2024CitationNano Letters, v.24, no.50, pp 16039 - 16046PublisherAmerican Chemical Society
SCIESCOPUS
Highly C-axis Aligned ALD-InGaO Channel Improving Mobility and Thermal Stability for Next-Generation 3D Memory DevicesGo to Linkopen access

Ryu, Seong-Hwan; Kim, Hye-Mi; Kim, Dong-Gyu; Park, Jin-Seong

ArticleIssue Date2025CitationAdvanced Electronic Materials, v.11, no.3, pp 1 - 10PublisherWILEY
SCIESCOPUS
Oxide Semiconductor for Advanced Memory Architectures: Atomic Layer Deposition, Key Requirement and ChallengesGo to Linkopen access

Lee, Chi-Hoon; Ryu, Seong-Hwan; Hwang, Taewon; Kim, Sang-Hyun; Kim, Yoon-Seo; Park, Jin-Seong

ArticleIssue Date2026CitationNANO-MICRO LETTERS, v.18, no.1, pp 1 - 45PublisherSHANGHAI JIAO TONG UNIV PRESS
SCIESCOPUS
Tailoring indium oxide film characteristics through oxygen reactants in atomic layer deposition with highly reactive liquid precursorGo to Link

Ryu, Seong-Hwan; Hong, TaeHyun; Choi, Su-Hwan; Yeom, Kyuhyun; Won Ryu, Dae; Hyeon Seok, Jang; Park, Jin-Seong

ArticleIssue Date2024CitationApplied Surface Science, v.664, pp 1 - 8PublisherElsevier BV
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