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Recent progress in HfO2-based ferroelectric devices with oxide semiconductor channels: a comprehensive reviewGo to Linkopen access

Kang, He Young; Shin, Yun Ho; Kim, Da Eun; Kwon, Dae Woong; Jeong, Jae Kyeong

ArticleIssue Date2026CitationNANOSCALE ADVANCES, v.8, no.7, pp 2159 - 2175PublisherROYAL SOC CHEMISTRY
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