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Bio-realistic synaptic characteristics in the cone-shaped ZnO memristive deviceGo to Linkopen access

Sokolov, Andrey Sergeevich; Jeon, Yu-Rim; Kim, Sohyeon; Ku, Boncheol; Choi, Changhwan

ArticleIssue Date2019CitationNPG ASIA MATERIALS, v.11, pp.1 - 15PublisherNATURE PUBLISHING GROUP
SCISCIESCOPUS
Compliance-Free, Digital SET and Analog RESET Synaptic Characteristics of Sub-Tantalum Oxide Based Neuromorphic DeviceGo to Linkopen access

Abbas, Yawar; Jeon, Yu-Rim; Sokolov, Andrey Sergeevich; Kim, Sohyeon; Ku, Boncheol; Choi, Changhwan

ArticleIssue Date2018CitationScientific Reports, v.8, no.1PublisherNature Publishing Group
SCIESCOPUS
Engineering synaptic characteristics of TaOx/HfO2 bi-layered resistive switching deviceGo to Link

Kim, Sohyeon; Abbas, Yawar; Jeon, Yu-Rim; Sokolov, Andrey Sergeevich; Ku, Boncheol; Choi, Changhwan

ArticleIssue Date2018CitationNANOTECHNOLOGY, v.29, no.41PublisherIOP PUBLISHING LTD
SCIESCOPUS
Influence of in-situ NH3 plasma passivation on the electrical characteristics of Ga-face n-GaN MOS capacitor with atomic layer deposited HfO2Go to Link

Jung, Woo Suk; Lim, Donghwan; Han, Hoonhee; Sokolov, Andrey Sergeevich; Jeon, Yu-Rim; Choi, Changhwan

ArticleIssue Date2018CitationSOLID-STATE ELECTRONICS, v.149, pp.52 - 56PublisherPERGAMON-ELSEVIER SCIENCE LTD
SCISCIESCOPUS
Influence of oxygen vacancies in ALD HfO2-x thin films on non-volatile resistive switching phenomena with a Ti/HfO2-x/Pt structureGo to Link

Sokolov, Andrey Sergeevich; Jeon, Yu-Rim; Kim, Sohyeon; Ku, Boncheol; Lim, Donghwan; Han, Hoonhee; Chae, Myeong Gyoon; Lee, Jaeho; Ha, Beom Gil; Choi, Changhwan

ArticleIssue Date2018CitationApplied Surface Science, v.434, pp 822 - 830PublisherElsevier BV
SCISCIESCOPUS
Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviorsGo to Link

Ku, Boncheol; Abbas, Yawar; Sokolov, Andrey Sergeevich; Choi, Changhwan

ArticleIssue Date2018CitationJournal of Alloys and Compounds, v.735, pp 1181 - 1188PublisherElsevier BV
SCIESCOPUS
Silver-Adapted Diffusive Memristor Based on Organic Nitrogen-Doped Graphene Oxide Quantum Dots (N-GOQDs) for Artificial Biosynapse ApplicationsGo to Link

Sokolov, Andrey Sergeevich; Ali, Mumtaz; Riaz, Rabia; Abbas, Yawar; Ko, Min Jae; Choi, Changhwan

ArticleIssue Date2019CitationADVANCED FUNCTIONAL MATERIALS, v.29, no.18, pp.1 - 11PublisherWILEY-V C H VERLAG GMBH
SCIESCOPUS
Structural engineering of tantalum oxide based memristor and its electrical switching responses using rapid thermal annealingGo to Link

Abbas, Yawar; Sokolov, Andrey Sergeevich; Jeon, Yu-Rim; Kim, Sohyeon; Ku, Boncheol; Choi, Changhwan

ArticleIssue Date2018CitationJOURNAL OF ALLOYS AND COMPOUNDS, v.759, pp.44 - 51PublisherELSEVIER SCIENCE SA
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