Bio-realistic synaptic characteristics in the cone-shaped ZnO memristive deviceopen access
- Authors
- Sokolov, Andrey Sergeevich; Jeon, Yu-Rim; Kim, Sohyeon; Ku, Boncheol; Choi, Changhwan
- Issue Date
- Jan-2019
- Publisher
- NATURE PUBLISHING GROUP
- Citation
- NPG ASIA MATERIALS, v.11, pp.1 - 15
- Indexed
- SCIE
SCOPUS
- Journal Title
- NPG ASIA MATERIALS
- Volume
- 11
- Start Page
- 1
- End Page
- 15
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/15155
- DOI
- 10.1038/s41427-018-0105-7
- ISSN
- 1884-4049
- Abstract
- We demonstrate inherent biorealistic synaptic plasticity functions in the Pt/n-ZnO/SiO2-x/Pt heterostructures, where the n-ZnO semiconductor is geometrically cone-shaped in the size of a few nanometers. The synaptic functions were achieved within a two-terminal, electroforming-free, and low-power rectifying diode-like resistive switching device. The important rate-dependent synaptic functions, such as the nonlinear transient conduction behavior, short-and long-term plasticity, paired-pulse facilitation, spike-rate-dependent plasticity and sliding threshold effect, were investigated in a single device. These characteristics closely mimic the memory and learning functions of those in biosynapses, where frequency-dependent identical spiking operations are mostly taking place, and we emulate these characteristics in the "Learning-Forgetting-Relearning" synaptic behavior. The switching dynamics in the cone-shaped n-ZnO semiconductor are correlated with the transport mechanism along the grain boundaries of the charged ion species, namely, oxygen vacancies and charged oxygen. The diffusion and generation/recombination of these defects have specific time scales of self-decay by virtue of the asymmetric profile of the n-ZnO cone defects. Finally, the essential biorealistic synaptic plasticity functions were discovered for the perspectives of dynamic/adaptive electronic synapse implementations in hardware-based neuromorphic computing.
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