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Comparative study of Al2O3, HfO2, and HfAlOx for improved self-compliance bipolar resistive switching Go to Link

Sokolov, Andrey S.; Son, Seok Ki; Lim, Donghwan; Han, Hoon Hee; Jeon, Yu-Rim; Lee, Jae Ho; Choi, Changhwan

ArticleIssue Date2017CitationJournal of the American Ceramic Society, v.100, no.12, pp 5638 - 5648PublisherAmerican Ceramic Society

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Suppressed charge trapping characteristics of (NH₄)₂Sx passivated GaN MOS device with atomic layer deposited HfAlOx gate dielectric Go to Link

Han, Hoon Hee; Lim, Donghwan; Sergeevich, Andrey Sokolov; Jeon, Yu-Rim; Lee, Jae Ho; Son, Seok Ki; Choi, Changhwan

ArticleIssue Date2017CitationMicroelectronic Engineering, v.178, pp 240 - 244PublisherElsevier BV

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The effects of process temperature on the work function modulation of ALD HfO₂ MOS device with plasma enhanced ALD TiN metal gate using TDMAT precursor Go to Link

Kim, Young Jin; Lim, Donghwan; Han, Hoon Hee; Sergeevich, Andrey Sokolov; Jeon, Yu-Rim; Lee, Jae Ho; Son, Seok Ki; Choi, Changhwan

ArticleIssue Date2017CitationMicroelectronic Engineering, v.178, pp 284 - 288PublisherElsevier BV

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The Post Annealing to Control the Number of Layers of 2D MoS2 and SnS2

Choi, Moonsuk; Lim, Donghwan; Sergeevich, Andrey Sokolov; Son, Seok Ki; Kim, Young Jin; Han, Hoon Hee; Choi, Changhwan

ArticleIssue Date2016CitationJournal of Nanoscience and Nanotechnology, v.16, no.11, pp 11658 - 11661PublisherAmerican Scientific Publishers

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Browsing by Son, Seok KiAuthor

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