Suppressed charge trapping characteristics of (NH₄)₂Sx passivated GaN MOS device with atomic layer deposited HfAlOx gate dielectricSuppressed charge trapping characteristics of (NH4)(2)S-x passivated GaN MOS device with atomic layer deposited HfAlOx gate dielectric
- Other Titles
- Suppressed charge trapping characteristics of (NH4)(2)S-x passivated GaN MOS device with atomic layer deposited HfAlOx gate dielectric
- Authors
- Han, Hoon Hee; Lim, Donghwan; Sergeevich, Andrey Sokolov; Jeon, Yu-Rim; Lee, Jae Ho; Son, Seok Ki; Choi, Changhwan
- Issue Date
- Jun-2017
- Publisher
- ELSEVIER
- Keywords
- Sulfur passivation; Interface trap density; Charge trapping; GaN device
- Citation
- MICROELECTRONIC ENGINEERING, v.178, pp.240 - 244
- Indexed
- SCIE
SCOPUS
- Journal Title
- MICROELECTRONIC ENGINEERING
- Volume
- 178
- Start Page
- 240
- End Page
- 244
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/19689
- DOI
- 10.1016/j.mee.2017.05.027
- ISSN
- 0167-9317
- Abstract
- The charge trapping behaviors of ammonium poly-sulfide,(NH4)(2)S-x.,passivated GaN MOS device with atomic layer deposited HfAlOx. gate dielectric and DC-sputtered TiN gate electrode are investigated and compared with those of GaN MOS device with hydrochloric acid, HCI, passivation. Compared to non-S passivated device, higher peak capacitance (>20% @1 MHz), reduced frequency dispersion (similar to 30% down arrow) lower hysteresis (similar to 34% down arrow), higher breakdown (1.3x), lower stress induced flat-band voltage (V-FB) shift (similar to 30% down arrow), and lower interface state density (D-it) stronger immunity D-it generation (Delta D-it) against gate bias voltage are attained with S-passivated device. Further improved characteristics are observed with post deposition annealing at 400 degrees C for 10 min. These behaviors are mainly attributed to higher bond strength energy of S-O and S-N than those of CI-O and Cl-N bonds.
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