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Grain size engineering via a Hf0.5Zr0.5O2 seed layer for FeFET memory and synaptic devicesGo to Link

Park, Junhyeok; Chung, Chulwon; Ku, Boncheol; Yun, Seunghyeon; Park, Kyungsoo; Choi, Changhwan

ArticleIssue Date2025CitationNanoscale, v.17, no.16, pp 10324 - 10333PublisherRoyal Society of Chemistry
SCIESCOPUS
Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/HfO<sub>2</sub>/Hf<sub>0.5 </sub>Zr<sub>0.5</sub>O<sub>2</sub> laminated thin films and CF<sub>4</sub> plasma passivation for improved memory and synaptic characteristics of ferroelectric field-effect transistorsGo to Link

Park, Kyungsoo; Chung, Chulwon; Ku, Boncheol; Yun, Seunghyeon; Park, Junhyeok; Choi, Changhwan

ArticleIssue Date2025CitationNanoscale, v.17, no.10, pp 5689 - 5699PublisherRoyal Society of Chemistry
SCIESCOPUS
The effects of inserted layers (HfO2, ZrO2, Y2O3, La2O3) on the ferroelectric and synaptic properties of Zr-doped HfO2 sandwich structureGo to Link

Chung, Chulwon; Park, Kyungsoo; Yun, Seunghyeon; Park, Junhyeok; Jeong, Hyeon Cheol; Choi, Changhwan

ArticleIssue Date2025CitationApplied Surface Science, v.710, pp 1 - 11PublisherElsevier BV
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