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Double MgO-Based Perpendicular Magnetic Tunnel Junction for Artificial Neuronopen access
- Authors
- Kim, Dong Won; Yi, Woo Seok; Choi, Jin Young; Ashiba, Kei; Baek, Jong Ung; Jun, Han Sol; Kim, Jae Joon; Park, Jea Gun
- Issue Date
- Apr-2020
- Publisher
- FRONTIERS MEDIA SA
- Keywords
- neuromorphic; MRAM; spiking neuron; spiking neural network; artificial neuron
- Citation
- FRONTIERS IN NEUROSCIENCE, v.14, pp.1 - 9
- Indexed
- SCIE
SCOPUS
- Journal Title
- FRONTIERS IN NEUROSCIENCE
- Volume
- 14
- Start Page
- 1
- End Page
- 9
- ISSN
- 1662-4548
- Abstract
- A perpendicular spin transfer torque (p-STT)-based neuron was developed for a spiking neural network (SNN). It demonstrated the integration behavior of a typical neuron in an SNN; in particular, the integration behavior corresponding to magnetic resistance change gradually increased with the input spike number. This behavior occurred when the spin electron directions between double Co2Fe6B2 free and pinned layers in the p-STT-based neuron were switched from parallel to antiparallel states. In addition, a neuron circuit for integrate-and-fire operation was proposed. Finally, pattern-recognition simulation was performed for a single-layer SNN.
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles
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Related Researcher
- Park, Jea Gun
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)