Lanthanum Doping Enabling High Drain Current Modulation in a p-Type Tin Monoxide Thin-Film Transistor
- Authors
- Yim, Sungyeon; Kim, Taikyu; Yoo, Baekeun; Xu, Hongwei; Youn, Yong; Han, Seungwu; Jeong, Jae Kyeong
- Issue Date
- Dec-2019
- Publisher
- AMER CHEMICAL SOC
- Keywords
- cosputtering; p-type semiconductor; tin monoxide; lanthanum doping; thin-film transistor
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.11, no.50, pp.47025 - 47036
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 11
- Number
- 50
- Start Page
- 47025
- End Page
- 47036
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/11649
- DOI
- 10.1021/acsami.9b14462
- ISSN
- 1944-8244
- Abstract
- Effects of lanthanum (La) loading on the structural, optical, and electrical properties of tin monoxide (SnO) films were examined as a p-type semiconducting layer. La loading up to 1.9 atom % caused the texturing of the tetragonal SnO phase with a preferential orientation of (101), which was accompanied by the smoother surface morphology. Simultaneously, the incorporated La cation suppressed the formation of n-type SnO2 in the La-doped SnO film and widened its optical band gap. These variations allowed the 1.9 atom % La-loaded SnO film to have a high hole mobility and carrier density, compared with the La-free control SnO film. The superior semiconducting property was reflected in the p-type thin-film transistor (TFT). The control SnO TFTs exhibited the field-effect mobility (mu(SAT)) an I-ON/OFF ratio of 0.29 cm(2) V-1 s(-1) and 5.4 x 10(2), respectively. Enhancement in the mu(SAT) value and I-ON/OFF ratio was observed for the TFTs with the 1.9 atom % La-loaded SnO channel layer: they were improved to 1.2 cm(2) V-1 s(-1) and 7.3 x 10(3), respectively. The reason for this superior performance was discussed on the basis of smoother morphology, suppression of disproportionation conversion from Sn2+ to Sn + Sn4+, and reduced gap-state density.
- Files in This Item
-
Go to Link
- Appears in
Collections - 서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/11649)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.