Two-step hydrogen-ion implantation annihilation of threading dislocation defects in strain-relaxed Si0.7Ge0.3
- Authors
- Park, Joo-Hyeong; Park, Jea-Gun
- Issue Date
- Dec-2021
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Strain-relaxed SiGe; Annihilating threading dislocation; Hydrogen ion implantation; Dislocation sink
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.79, no.12, pp.1151 - 1156
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 79
- Number
- 12
- Start Page
- 1151
- End Page
- 1156
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/138501
- DOI
- 10.1007/s40042-021-00340-7
- ISSN
- 0374-4884
- Abstract
- We propose a two-step hydrogen-ion implantation approach for realizing crystalline-defect-free Si1-xGex channels for potential use in gate-all-around field-effect-transistors beyond the 3 nm transistor-design rule. A dislocation sink was created in a projected range of ion implantation 100 and 200 nm above the strain-relaxed Si0.7Ge0.3 layer and Si substrate interface using two-step H+ -ion implantation. Doses of 5 x 10(15) and 2 x 10(15) atoms/cm(2) were used at 100 and 200 nm, respectively, above the interface, and post-annealing was performed at 800 degrees C for 30 min. The two-step implantation annihilated the misfit and threading dislocations near the relaxed Si0.7Ge0.3/Si interface. The annihilation efficiency strongly depended on the location and second ion dose of the implantation: the maximum annihilation efficiency was obtained at 100 and 200 nm above the interface with multiple H+-ion doses of 5 x and 2 x 10(15) atoms/cm(2).
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