Improvement in carrier mobility through band-gap engineering in atomic-layer-deposited In-Ga-Zn-O stacks
- Authors
- Seul, Hyeon Joo; Cho, Jae Hoon; Hur, Jae Seok; Cho, Min Hoe; Cho, Min Hee; Ryu, Min Tae; Jeong, Jae Kyeong
- Issue Date
- May-2022
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Indium gallium zinc oxide; Atomic layer deposition; Hetero-junction; Thin-film transistor; Hafnium oxide; High mobility
- Citation
- JOURNAL OF ALLOYS AND COMPOUNDS, v.903, pp.1 - 9
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF ALLOYS AND COMPOUNDS
- Volume
- 903
- Start Page
- 1
- End Page
- 9
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/138699
- DOI
- 10.1016/j.jallcom.2022.163876
- ISSN
- 0925-8388
- Abstract
- This paper reports the performance improvement of heterojunction channel field-effect transistor using an atomic-layer-deposited InGaZnO (IGZO) channel on basis of a band alignment. The heterojunction stack consisted of a 5 nm-thick In0.61Ga0.16Zn0.23O confinement layer (CL) and a 2 nm-thick In0.52Ga0.32Zn0.15O barrier layer (BL). Band-gap engineering through cation composition and thickness modulation of each layers allowed free electron diffusion from the In0.52Ga0.32Zn0.15O BL to the In0.61Ga0.16Zn0.23O CL and carriers confinement in CL, leading to the improvement in field-effect mobility. The control transistor with 5 nm-thick IGZO CL layer had a mobility of 33.4 cm(2)/Vs, whereas the heterojunction transistor with 2 nm-thick IGZO BL exhibited a higher mobility of 50.7 cm(2)/Vs as well as low gate swing of 89 mV/decade as a result of carrier transporting boosting. Moreover, the corresponding heterojunction channel transistors exhibited better gate bias stability due to the mitigation of gap states creation and passivating behavior by introducing the 2 nm-thick IGZO BL.
- Files in This Item
-
Go to Link
- Appears in
Collections - 서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/138699)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.