Improvement in performance of indium gallium oxide thin film transistor via oxygen mediated crystallization at a low temperature of 200 °C
- Authors
- Park, Hyeong Jin; Kim, Taikyu; Kim, Min Jae; Lee, Hojae; Lim, Jun Hyung; Jeong, Jae Kyeong
- Issue Date
- May-2022
- Publisher
- ELSEVIER SCI LTD
- Keywords
- Flexible electronics; Indium gallium oxide; Low temperature crystallization; Oxide semiconductor; Thin-film transistor
- Citation
- CERAMICS INTERNATIONAL, v.48, no.9, pp.12806 - 12812
- Indexed
- SCIE
SCOPUS
- Journal Title
- CERAMICS INTERNATIONAL
- Volume
- 48
- Number
- 9
- Start Page
- 12806
- End Page
- 12812
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/138702
- DOI
- 10.1016/j.ceramint.2022.01.151
- ISSN
- 0272-8842
- Abstract
- We report the fabrication of high-performance polycrystalline indium gallium oxide (IGO) thin film transistors (TFTs) at a low temperature of 200 °C. Growth of a highly aligned cubic phase with a bixbyite structure was accelerated at a certain proportion of oxygen plasma density during deposition of the IGO thin film, which leads to outstanding electrical characteristics. The resulting polycrystalline IGO TFT exhibited a high field-effect mobility of 56.0 cm2/V, a threshold voltage (VTH) of 0.10 V, a low subthreshold gate swing of 0.10 V/decade, and a current modulation ratio of >108. Moreover, the crystalline IGO TFTs have highly stable behaviors with a small VTH shift of +0.8 and −1.0 V against a positive bias stress (VGS,ST −VTH = 20 V) and negative bias illumination stress (VGS,ST −VTH = −20 V) for 3,600 s, which is attributed to the high quality of the bixbyite crystalline structure.
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