Polymer link breakage of polyimide-film-surface using hydrolysis reaction accelerator for enhancing chemical-mechanical-planarization polishing-rateopen access
- Authors
- Jeong, Gi-Ppeum; Park, Jun-Seong; Lee, Seung-Jae; Kim, Pil-Su; Han, Man-Hyup; Hong, Seong-Wan; Kim, Eun-Seong; Park, Jin-Hyung; Choo, Byoung-Kwon; Kang, Seung-Bae; Park, Jea-Gun
- Issue Date
- Mar-2022
- Publisher
- NATURE PORTFOLIO
- Citation
- SCIENTIFIC REPORTS, v.12, no.1, pp.1 - 10
- Indexed
- SCIE
SCOPUS
- Journal Title
- SCIENTIFIC REPORTS
- Volume
- 12
- Number
- 1
- Start Page
- 1
- End Page
- 10
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/139255
- DOI
- 10.1038/s41598-022-07340-y
- ISSN
- 2045-2322
- Abstract
- In this study, the chemical decomposition of a polyimide-film (i.e., a PI-film)-surface into a soft-film-surface containing negatively charged pyromellitic dianhydride (PMDA) and neutral 4,4 '-oxydianiline (ODA) was successfully performed. The chemical decomposition was conducted by designing the slurry containing 350 nm colloidal silica abrasive and small molecules with amine functional groups (i.e., ethylenediamine: EDA) for chemical-mechanical planarization (CMP). This chemical decomposition was performed through two types of hydrolysis reactions, that is, a hydrolysis reaction between OH- ions or R-NH3+ (i.e., EDA with a positively charged amine groups) and oxygen atoms covalently bonded with pyromellitimide on the PI-film-surface. In particular, the degree of slurry adsorption of the PI-film-surface was determined by the EDA concentration in the slurry because of the presence of R-NH3+, that is, a higher EDA concentration resulted in a higher degree of slurry adsorption. In addition, during CMP, the chemical decomposition degree of the PI-film-surface was principally determined by the EDA concentration; that is, the degree of chemical composition was increased noticeably and linearly with the EDA concentration. Thus, the polishing-rate of the PI-film-surface increased notably with the EDA concentration in the CMP slurry.
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