Memory characteristics of thin film transistor with catalytic metal layer induced crystallized indium-gallium-zinc-oxide (IGZO) channel
DC Field | Value | Language |
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dc.contributor.author | Han, Hoonhee | - |
dc.contributor.author | Jang, Seokmin | - |
dc.contributor.author | Kim, Duho | - |
dc.contributor.author | Kim, Taeheun | - |
dc.contributor.author | Cho, Hyeoncheol | - |
dc.contributor.author | Shin, Heedam | - |
dc.contributor.author | Choi, Changhwan | - |
dc.date.accessioned | 2022-07-06T10:44:20Z | - |
dc.date.available | 2022-07-06T10:44:20Z | - |
dc.date.created | 2022-01-06 | - |
dc.date.issued | 2022-01 | - |
dc.identifier.issn | 2079-9292 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/139867 | - |
dc.description.abstract | The memory characteristics of a flash memory device using c-axis aligned crystal indium gallium zinc oxide (CAAC-IGZO) thin film as a channel material were demonstrated. The CAAC-IGZO thin films can replace the current poly-silicon channel, which has reduced mobility because of grain-induced degradation. The CAAC-IGZO thin films were achieved using a tantalum catalyst layer with annealing. A thin film transistor (TFT) with SiO2/Si3N4/Al2O3 and CAAC-IGZO thin films, where Al2O3 was used for the tunneling layer, was evaluated for a flash memory application and compared with a device using an amorphous IGZO (a-IGZO) channel. A source and drain using indium-tin oxide and aluminum were also evaluated for TFT flash memory devices with crystallized and amorphous channel materials. Compared with the a-IGZO device, higher on-current (Ion), improved field effect carrier mobility (µFE), a lower body trap (Nss), a wider memory window (∆Vth), and better retention and endurance characteristics were attained using the CAAC-IGZO device. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | MDPI | - |
dc.title | Memory characteristics of thin film transistor with catalytic metal layer induced crystallized indium-gallium-zinc-oxide (IGZO) channel | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Choi, Changhwan | - |
dc.identifier.doi | 10.3390/electronics11010053 | - |
dc.identifier.scopusid | 2-s2.0-85121586727 | - |
dc.identifier.wosid | 000751365600001 | - |
dc.identifier.bibliographicCitation | Electronics (Switzerland), v.11, no.1, pp.1 - 12 | - |
dc.relation.isPartOf | Electronics (Switzerland) | - |
dc.citation.title | Electronics (Switzerland) | - |
dc.citation.volume | 11 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 12 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Computer Science | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Computer Science, Information Systems | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | LOW-VOLTAGE | - |
dc.subject.keywordPlus | SEMICONDUCTOR | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | DIELECTRICS | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | FLASH | - |
dc.subject.keywordPlus | FET | - |
dc.subject.keywordAuthor | CAAC-IGZO | - |
dc.subject.keywordAuthor | High-k | - |
dc.subject.keywordAuthor | NAND flash | - |
dc.subject.keywordAuthor | Thin film transistor | - |
dc.identifier.url | https://www.mdpi.com/2079-9292/11/1/53 | - |
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