Memory characteristics of thin film transistor with catalytic metal layer induced crystallized indium-gallium-zinc-oxide (IGZO) channelopen access
- Authors
- Han, Hoonhee; Jang, Seokmin; Kim, Duho; Kim, Taeheun; Cho, Hyeoncheol; Shin, Heedam; Choi, Changhwan
- Issue Date
- Jan-2022
- Publisher
- MDPI
- Keywords
- CAAC-IGZO; High-k; NAND flash; Thin film transistor
- Citation
- Electronics (Switzerland), v.11, no.1, pp.1 - 12
- Indexed
- SCOPUS
- Journal Title
- Electronics (Switzerland)
- Volume
- 11
- Number
- 1
- Start Page
- 1
- End Page
- 12
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/139867
- DOI
- 10.3390/electronics11010053
- ISSN
- 2079-9292
- Abstract
- The memory characteristics of a flash memory device using c-axis aligned crystal indium gallium zinc oxide (CAAC-IGZO) thin film as a channel material were demonstrated. The CAAC-IGZO thin films can replace the current poly-silicon channel, which has reduced mobility because of grain-induced degradation. The CAAC-IGZO thin films were achieved using a tantalum catalyst layer with annealing. A thin film transistor (TFT) with SiO2/Si3N4/Al2O3 and CAAC-IGZO thin films, where Al2O3 was used for the tunneling layer, was evaluated for a flash memory application and compared with a device using an amorphous IGZO (a-IGZO) channel. A source and drain using indium-tin oxide and aluminum were also evaluated for TFT flash memory devices with crystallized and amorphous channel materials. Compared with the a-IGZO device, higher on-current (Ion), improved field effect carrier mobility (µFE), a lower body trap (Nss), a wider memory window (∆Vth), and better retention and endurance characteristics were attained using the CAAC-IGZO device.
- Files in This Item
-
- Appears in
Collections - 서울 공과대학 > 서울 신소재공학부 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.