Recent Progress and Perspectives of Field-Effect Transistors Based on p-Type Oxide Semiconductors

Abstract

Oxide semiconductors are considered as one of the most promising candidates for back-end-of-line transistors for monolithic 3D integration due to various advantages, such as complementary metal-oxide-semiconductor (CMOS)-compatible method, low fabrication temperature, and promising electrical characteristics. As such, the demand for p-type oxide semiconductors that are comparable to their n-type oxide counterparts is increasing. However, the inferior electrical characteristics of p-channel field-effect transistors based on oxide semiconductors hinder their widespread application. Thus, the development of high-performance p-type oxide semiconductors is essential for their implementation in next-generation electronics, which have requirements such as innovative form factors, high power efficiencies, and superior transparency. Herein, strategies for improving the device performances of p-type oxide semiconductors fabricated via CMOS-compatible methods are reviewed from a material science and device physics perspective, and a brief history of p-type oxide semiconductors is discussed. Furthermore, critical issues for p-type oxide semiconductors, such as the transport mechanism, bias stress stability, high off-current, and ambipolar behavior, are discussed.