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Challenges on DTCO Methodology Towards Deep Submicron Interconnect Technology

Authors
Park, HeechunChang, KyungjoonJeong, JooyeonAhn, JaehoonChung, Ki-SeokKIM, Taewhan
Issue Date
Nov-2021
Publisher
IEEE
Citation
Proceedings - International SoC Design Conference 2021, ISOCC 2021, pp.215 - 218
Indexed
SCOPUS
Journal Title
Proceedings - International SoC Design Conference 2021, ISOCC 2021
Start Page
215
End Page
218
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/140378
DOI
10.1109/ISOCC53507.2021.9614026
ISSN
2163-9612
Abstract
Design-Technology-co-optimization (DTCO) is essential in deep submicron technologies (e.g., 14nm and below) to co-optimize process technology and design rules and obtain more benefit from advanced node. As the process technology shrinks to deep submicron, the importance of back-end-of-line (BEOL) interconnect in a full chip design drastically grows since its less-Than-micron width brings unexpected critical design rules that requires novel design techniques. In this paper, we provide a comprehensive survey on recent challenging issues and cutting-edge design methodologies for DTCO in deep submicron interconnect technology, which includes: offset assignment for pin accessibility; monolithic 3D integration; middle-of-line (MOL) utilization for routing; BEOL-Aware representative critical path circuit synthesis; and buried power rail (BPR).
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