Bidirectional Electric-Induced Conductance Based on GeTe/Sb2Te3 Interfacial Phase Change Memory for Neuro-Inspired Computingopen access
- Authors
- Kang, Shin-young; Jin, Soo-min; Lee, Ju-young; Woo, Dae-seong; Shim, Tae-hun; Nam, In-ho; Park, Jea-gun; Sutou, Yuji; Song, Yun-heub
- Issue Date
- Nov-2021
- Publisher
- MDPI
- Keywords
- interfacial phase change memory; phase change memory; artificial synaptic device; superlattice; neuromorphic devices
- Citation
- ELECTRONICS, v.10, no.21, pp.1 - 11
- Indexed
- SCIE
SCOPUS
- Journal Title
- ELECTRONICS
- Volume
- 10
- Number
- 21
- Start Page
- 1
- End Page
- 11
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/140516
- DOI
- 10.3390/electronics10212692
- ISSN
- 2079-9292
- Abstract
- Corresponding to the principles of biological synapses, an essential prerequisite for hardware neural networks using electronics devices is the continuous regulation of conductance. We implemented artificial synaptic characteristics in a (GeTe/Sb2Te3)(16) iPCM with a superlattice structure under optimized identical pulse trains. By atomically controlling the Ge switch in the phase transition that appears in the GeTe/Sb2Te3 superlattice structure, multiple conductance states were implemented by applying the appropriate electrical pulses. Furthermore, we found that the bidirectional switching behavior of a (GeTe/Sb2Te3)(16) iPCM can achieve a desired resistance level by using the pulse width. Therefore, we fabricated a Ge2Sb2Te5 PCM and designed a pulse scheme, which was based on the phase transition mechanism, to compare to the (GeTe/Sb2Te3)(16) iPCM. We also designed an identical pulse scheme that implements both linear and symmetrical LTP and LTD, based on the iPCM mechanism. As a result, the (GeTe/Sb2Te3)(16) iPCM showed relatively excellent synaptic characteristics by implementing a gradual conductance modulation, a nonlinearity value of 0.32, and 40 LTP/LTD conductance states by using identical pulse trains. Our results demonstrate the general applicability of the artificial synaptic device for potential use in neuro-inspired computing and next-generation, non-volatile memory.
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