Plasma-enhanced atomic layer deposited HfO2 films using a novel heteroleptic cyclopentadienyl-based Hf precursor
- Authors
- Baek, Ji-hoon; Choi, Wan-ho; Kim, Hohoon; Cheon, Seonghak; Byun, Younghun; Jeon, Woojin; Park, Jin-Seong
- Issue Date
- Oct-2021
- Publisher
- ELSEVIER SCI LTD
- Keywords
- Hafnium oxide; Plasma-enhanced atomic layer deposition (PEALD); (eta(5):eta(1)- Cp(CH2)(2)NMe)Hf(NEtMe)(2)(MAP-Hf01)
- Citation
- CERAMICS INTERNATIONAL, v.47, no.20, pp.29030 - 29035
- Indexed
- SCIE
SCOPUS
- Journal Title
- CERAMICS INTERNATIONAL
- Volume
- 47
- Number
- 20
- Start Page
- 29030
- End Page
- 29035
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/140619
- DOI
- 10.1016/j.ceramint.2021.07.065
- ISSN
- 0272-8842
- Abstract
- Plasma-enhanced atomic layer deposition of HfO2 films using a novel (eta(5):eta(1)- Cp(CH2)(2)NMe)Hf(NEtMe)(2)(MAP-Hf01) precursor and Ar/O-2 plasma as a co-reactant was studied. Saturated atomic layer deposition with nearly constant growth per cycle of 0.65 angstrom/cycle was observed and the O/Hf ratio was similar to that of bulk HfO2 at deposition temperatures ranging from 200 degrees C to 400 degrees C. With increasing HfO2 deposition temperature, the crystallinity and density of the HfO2 film also increased; however, the concentration of OH-related defects and surface roughness showed the opposite tendency. Notably, HfO2 film deposited at 400 degrees C exhibited the lowest level of hafnium suboxide (HfOx) and the highest crystallinity in monoclinic phase. The high-quality HfO2 films produced over a well-defined ALD window demonstrate that MAP-HfO1 is a promising candidate for deposition of HfO2 in advanced microelectronics.
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