Post-annealing effects on Si-doped Ga2O3 photodetectors grown by pulsed laser deposition
- Authors
- Jeong, Sang Ha; Thi Kim Oanh Vu; Kim, Eun Kyu
- Issue Date
- Oct-2021
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Ga2O3; PLD; DUV photodetector; Furnace annealing
- Citation
- JOURNAL OF ALLOYS AND COMPOUNDS, v.877, pp.1 - 6
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF ALLOYS AND COMPOUNDS
- Volume
- 877
- Start Page
- 1
- End Page
- 6
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/140626
- DOI
- 10.1016/j.jallcom.2021.160291
- ISSN
- 0925-8388
- Abstract
- We studied Si-doped Ga2O3 photodetectors with a metal-semiconductor-metal structure that were fabricated using pulsed laser deposition and a post-annealing process under an oxygen atmosphere in a temperature range from 500 degrees C to 800 degrees C. After post-annealing, the Si-doped Ga2O3 photodetectors with 500 degrees C was showed the highest photoresponsivity (0.34 A/W) and external quantum efficiency (166.23%), while the device with 800 degrees C was exhibited the fastest switching speeds (0.88 s/0.18 s) for the on/off switching. These results are due to changes in the defect densities from the chemical bond formation between Si and O atoms. Our results show that post thermal annealing of Si-doped beta-Ga2O3 layers can modify the photo detector performance depending on applications for high photoresponsivity or fast response time.
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