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Effect of the Blocking Oxide Layer With Asymmetric Taper Angles in 3-D NAND Flash Memories (vol 9, pg 774, 2021)open accessErratum: Effect of the Blocking Oxide Layer with Asymmetric Taper Angles in 3-D NAND Flash Memories (IEEE J. Electron Devices Soc. (2021) 9 (774–777) DOI: 10.1109/JEDS.2021.3104843) Erratum to “Effect of the Blocking Oxide Layer With Asymmetric Taper Angles in 3-D NAND Flash Memories”
- Other Titles
- Erratum: Effect of the Blocking Oxide Layer with Asymmetric Taper Angles in 3-D NAND Flash Memories (IEEE J. Electron Devices Soc. (2021) 9 (774–777) DOI: 10.1109/JEDS.2021.3104843) Erratum to “Effect of the Blocking Oxide Layer With Asymmetric Taper Angles in 3-D NAND Flash Memories”
- Issue Date
- Sep-2021
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Flash memories; Electron devices
- Citation
- IEEE Journal of the Electron Devices Society, v.9, pp.813 - 813
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE Journal of the Electron Devices Society
- Volume
- 9
- Start Page
- 813
- End Page
- 813
- ISSN
- 2168-6734
- Abstract
- In [1], the following sentence on p. 774, second column, is revised as follows.
- Appears in
Collections - 서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles
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