Highly‐Ordered Indium‐Gallium‐Zinc Oxide Thin Film Transistor via Atomic Layer Deposition Process

Abstract

We reported the fabrication of amorphous or crystalline IGZO thin film transistors using atomic layer deposition (ALD) method. To observe the crystallinity effect of thin films which are used as a semiconductor channels for TFTs, we tried to deposit crystalline-IGZO thin films with improving preferred orientation. In this paper, we formed IGZO thin film showing highly-oriented crystalline properties by insertion seed layer underneath a IGZO thin films. As a result, we could figure out the interrelationship between semiconductor channel crystallinity and electrical performance of devices.