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Highly‐Ordered Indium‐Gallium‐Zinc Oxide Thin Film Transistor via Atomic Layer Deposition Process
- Authors
- Hyeonjoo, Seul; Hyunji, Yang; Nuri, On; Jeong, Jae Kyeong
- Issue Date
- May-2019
- Keywords
- Atomic Layer Deposition (ALD); Indium-Gallium-Zinc-Oxide (IGZO); Crystalline Oxide Thin Film; Seed Layer; Oxide Thin Film Transistor
- Citation
- Digest of Technical Papers - SID International Symposium, v.50, no.1, pp 1237 - 1240
- Pages
- 4
- Indexed
- SCOPUS
- Volume
- 50
- Number
- 1
- Start Page
- 1237
- End Page
- 1240
- ISSN
- 0097-966X
2168-0159
- Abstract
- We reported the fabrication of amorphous or crystalline IGZO thin film transistors using atomic layer deposition (ALD) method. To observe the crystallinity effect of thin films which are used as a semiconductor channels for TFTs, we tried to deposit crystalline-IGZO thin films with improving preferred orientation. In this paper, we formed IGZO thin film showing highly-oriented crystalline properties by insertion seed layer underneath a IGZO thin films. As a result, we could figure out the interrelationship between semiconductor channel crystallinity and electrical performance of devices.
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Related Researcher
- Jeong, Jae Kyeong
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)