Comparative Study on Performance of IGZO Transistors With Sputtered and Atomic Layer Deposited Channel Layer
- Authors
- Cho, Min Hoe; Seol, Hyunju; Song, Aeran; Choi, Seonjun; Song, Yun Heub; Yun, Pil Sang; Chung, Kwun-Bum; Bae, Jong Uk; Park, Kwon-Shik; Jeong, Jae Kyeong
- Issue Date
- Apr-2019
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Atomic layer deposition (ALD); indium gallium zinc oxide (IGZO); sputtering; thin-film transistors (TFTs)
- Citation
- IEEE TRANSACTIONS ON ELECTRON DEVICES, v.66, no.4, pp.1783 - 1788
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON ELECTRON DEVICES
- Volume
- 66
- Number
- 4
- Start Page
- 1783
- End Page
- 1788
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/14244
- DOI
- 10.1109/TED.2019.2899586
- ISSN
- 0018-9383
- Abstract
- The structural, chemical, and electrical properties of amorphous indium gallium zinc oxide (a-IGZO) films by magnetron sputtering and atomic layer deposition (ALD) were investigated where both a-IGZO films had a comparable cation composition. The ALD-derived a-IGZO film exhibited the higher atomic packing density, the effective suppression of trap-like oxygen vacancy defect (VO), and the enhancement in the hybridization of the sp orbital of In, Ga, and Zn cations compared to those of the sputtered a-IGZO film. Hence, a significant improvement in terms of the field-effect mobility was observed for the thin-film transistors with an In0.50Ga0.34Zn0.16O channel by ALD (36.6 cm(2)/V.s) compared to that of the sputtered In0.48Ga0.38Zn0.14O transistor (20.1 cm(2)/V.s); the I-ON/OFF ratios for both were similar to 10(7). Simultaneously, the gate bias stress stability and photobias stress stability were also improved for the IGZO transistors with an ALD-derived channel, which can be explained by its reduced trap-like VO density.
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