Semiconductor–Insulator–Semiconductor Diode Consisting of Monolayer MoS2, h-BN, and GaN Heterostructure
- Authors
- Jeong, Hyun; Bang, Seungho; Oh, Hye Min; Jeong, Hyeon Jun; An, Sung-Jin; Han, Gang Hee; Kim, Hyun; Kim, Ki Kang; Park, Jin Cheol; Jeong, Mun Seok
- Issue Date
- Oct-2015
- Publisher
- AMER CHEMICAL SOC
- Keywords
- carrier tunneling; GaN; h-BN; monolayer MoS2; semiconductor-insulator-semiconductor diode
- Citation
- ACS NANO, v.9, no.10, pp.10032 - 10038
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS NANO
- Volume
- 9
- Number
- 10
- Start Page
- 10032
- End Page
- 10038
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/142910
- DOI
- 10.1021/acsnano.5b04233
- ISSN
- 1936-0851
- Abstract
- We propose a semiconductor insulator semiconductor (SIS) heterojunction diode consisting of monolayer (1-L) MoS2, hexagonal boron nitride (h-RN), and epitaxial p-GaN that can be applied to high-performance nanoscale optoelectronics. The layered materials of 1-L MoS2 and h-BN, grown by chemical vapor deposition, were vertically stacked by a wet-transfer method on a p-GaN layer. The final structure was verified by confocal photoluminescence and Raman spectroscopy. Current voltage (I-V) measurements were conducted to compare the device performance with that of a more classical p-n structure. In both structures (the p-n and SIS heterojunction diode), clear current-rectifying characteristics were observed. In particular, a current and threshold voltage were obtained for the SIS structure that was higher compared to that of the p-n structure. This indicated that tunneling is the predominant carrier transport mechanism. In addition, the photoresponse of the SIS structure induced by the illumination of visible light was observed by photocurrent measurements.
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