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Structural and optical properties of MoS2 layers grown by successive two-step chemical vapor deposition method
- Authors
- Qiu, Dongri; Lee, Dong Uk; Pak, Sang Woo; Kim, Eun Kyu
- Issue Date
- Jul-2015
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Molybdenum disulfide; Chemical vapor deposition; Field effect transistor
- Citation
- THIN SOLID FILMS, v.587, pp.47 - 51
- Indexed
- SCIE
SCOPUS
- Journal Title
- THIN SOLID FILMS
- Volume
- 587
- Start Page
- 47
- End Page
- 51
- ISSN
- 0040-6090
- Abstract
- We have studied a successive two-step chemical vapor deposition (CVD) method to prepare large-scale MoS2 thin films using a horizontal hot wall furnace. The CVD growth was followed by evaporation of the MoO3 precursor on similar to 2.5 x 2.5 cm(2) SiO2/Si substrates in the first step and a temperature ramp for sulfurization as a second step. Synthesized films were systematically analyzed by various structural and optical measurements. Crystallinity of the synthesized MoS2 tri-layer films exhibited a typical 2H-MoS2 structure and uniformly covered the whole substrate. MoS2 field effect transistors were fabricated by using the obtained CVD-MoS2, and these showed n-type behavior with an on/off ratio of about 10(3). (C) 2015 Elsevier B.V. All rights reserved.
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