Conductivity Enhancement of Silicon Nanowires
- Authors
- Ko, Jae-Woo; Park, Seongju; Li, Xianhong; Baek, In-Bok; Lee, Seongjae; Jang, Moongyu
- Issue Date
- Dec-2012
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Conductivity; Silicon nanowire
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.61, no.12, pp.1990 - 1993
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 61
- Number
- 12
- Start Page
- 1990
- End Page
- 1993
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/144686
- DOI
- 10.3938/jkps.61.1990
- ISSN
- 0374-4884
- Abstract
- Current-voltage (I-V) characteristics for various silicon wires of different length-to-width ratios were numerically calculated by solving the Poisson equation and the current continuity equations for electrons and holes self-consistently. We found that, as the silicon wire became thinner or the length-to-width aspect ratio becomes higher, the I-V data deviated more from the Ohmic relation: the current density at a certain bias voltage was larger. In the case of a 500-nm-long silicon wire with n-type doping of 1 x 10(16) cm(3), for example, the current density of a silicon wire at a bias voltage of 2 volts increased by nearly threefold as the length-to-width ratio of wires was increased from 1 to 25. This behavior is attributed to an enhanced field at the source due to the strong stray field configuration near the contacts at both ends of a wire and to the large carrier build-up in the middle. Our result suggests that a classical treatment of nanowire transport with a proper account of the nonuniform field distribution along the wire may partly explain the conductivity enhancement phenomenon often observed in various nanowires and nanotubes.
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