Field emission properties of a three-dimensional network of single-walled carbon nanotubes inside pores of porous silicon
- Authors
- Lee, Jungwoo; Park, Taehee; Lee, Jongtaek; Kim, Heesu; Lee, Sanghun; Lee, Haiwon; Yi, Whikun
- Issue Date
- Oct-2012
- Publisher
- IEEE Computer Society
- Keywords
- carbon nanotube; Field emission; porous silicon
- Citation
- Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012, pp.362 - 363
- Indexed
- SCOPUS
- Journal Title
- Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012
- Start Page
- 362
- End Page
- 363
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/144713
- DOI
- 10.1109/IVNC.2012.6316970
- Abstract
- This paper reports the characteristic field emission (FE) properties of single-walled carbon nanotubes (SWNTs) synthesized on the inside pores of a porous silicon (PS) substrate, as well as on the top surface of a PS substrate. Their turn-on fields and emission current densities are measured and compared with those of other types of SWNTs in similar environments. Investigation of field emission properties of single-walled carbon nanotubes (SWNTs) synthesized on the inside pores of a porous silicon (PS) substrate reveals a low turn-on field of about 2.25 V μm-1 at 10 μA/cm2 and a high field-enhancement factor (6182) compare with other samples. A life time stability test is performed by monitoring the current density change before and after repeated exposure to O2, suggesting that the pore channel can effectively prevent O2+ ion etching from destroying the SWNTs within the pores of the PS layer.
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