Electronic Transport of Lateral PtSi/n/n(+)-Si Schottky Diodes
- Authors
- Li, Xianhong; Baek, In-Bok; Lee, Seongjae; Jang, Moongyu
- Issue Date
- Jul-2012
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Silicon Nanoribbon; Bipolar Transport; Surface Recombination
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.12, no.7, pp.5799 - 5803
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 12
- Number
- 7
- Start Page
- 5799
- End Page
- 5803
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/144747
- DOI
- 10.1166/jnn.2012.6321
- ISSN
- 1533-4880
- Abstract
- We investigated the transport properties of a lateral PtSi/n/n(+)-Si Schottky diode prepared on an n-type silicon-on-insulator (SOI) wafer with a special attention on the bipolar transport and the surface effect. With applying a back-gate bias changing from +18 V to -18 V, the unipolar transport behavior switched over to the bipolar one, where an enhanced surface recombination rate due to a high surface-to-volume ratio produced a current density similar to 3 x 10(3) A/cm(2) for 2 V bias through a 40 nm-thick and 18 mu m-long nanoribbon. The recombination time was estimated to be similar to 1 mu s from independent CV measurements, which is much smaller value than that of a bulk. The local Fermi energy level for electrons at the channel center was monitored by an additional voltage probe during each I-D-V-D measurement and it revealed the intricate nature of the bipolar transport manifested by the huge asymmetrical hysteretic behavior on a drain bias cycle which is attributed to the charge storage effect and asymmetrical junction profiles.
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