The characteristics of sub-10 nm gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors

Abstract

10 and 6 nm erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect transistors (SB-MOSFETs) were manufactured. The manufactured 10 nm n-type SB-MOSFET showed a large on/off current ratio (>10(6)) with low leakage current less than 10(-5) mu A/mu m due to the existence of the robust Schottky barrier between source and channel region. The saturation currents were 550 and 320 mu A/mu m when drain and gate voltages were 2 V and 3 V. for the 10 and 6 nm erbium-silicided n-type SB-MOSFETs, respectively. The manufactured SB-MOSFETs exhibited superior short channel characteristics due to the existence of Schottky barrier between source and channel region.