The characteristics of sub-10 nm gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors
- Authors
- Jang, Moongyu; Lee, Seongjae
- Issue Date
- Jan-2012
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Erbium silcide; Schottky barriers; Metal-oxide-semiconductor field-effect transistors; Short channel; Transmission electron microscopy
- Citation
- THIN SOLID FILMS, v.520, no.6, pp.2166 - 2169
- Indexed
- SCIE
SCOPUS
- Journal Title
- THIN SOLID FILMS
- Volume
- 520
- Number
- 6
- Start Page
- 2166
- End Page
- 2169
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/144798
- DOI
- 10.1016/j.tsf.2011.09.081
- ISSN
- 0040-6090
- Abstract
- 10 and 6 nm erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect transistors (SB-MOSFETs) were manufactured. The manufactured 10 nm n-type SB-MOSFET showed a large on/off current ratio (>10(6)) with low leakage current less than 10(-5) mu A/mu m due to the existence of the robust Schottky barrier between source and channel region. The saturation currents were 550 and 320 mu A/mu m when drain and gate voltages were 2 V and 3 V. for the 10 and 6 nm erbium-silicided n-type SB-MOSFETs, respectively. The manufactured SB-MOSFETs exhibited superior short channel characteristics due to the existence of Schottky barrier between source and channel region.
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