Dynamic band alignment modulation of ultrathin WOx/ZnO stack for high on/off ratio field-effect switching applications
- Authors
- Lee, Ho-In; Park, Jinseon; Kim, Yun Ji; Heo, Sunwoo; Hwang, Jeongwoon; Kim, Seung-Mo; Lee, Yongsu; Cho, Kyeongjae; Sung, Myung Mo; Lee, Byoung Hun
- Issue Date
- Aug-2020
- Publisher
- ROYAL SOC CHEMISTRY
- Citation
- NANOSCALE, v.12, no.32, pp.16755 - 16761
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANOSCALE
- Volume
- 12
- Number
- 32
- Start Page
- 16755
- End Page
- 16761
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/145331
- DOI
- 10.1039/c9nr10988a
- ISSN
- 2040-3364
- Abstract
- A two-dimensional (2D) WOx/ZnO stack reveals a unique carrier transport behavior, which can be utilized as a novel device element to achieve a very high on/off ratio (>10(6)) and an off current density lower than 1 nA cm(-2). These unique behaviors are explained by a dynamic band alignment between WOx and ZnO, which can be actively modulated by a gate bias. The performance of FET utilizing the WOx/ZnO stack is comparable to those of other 2D heterojunction devices; however, it has a unique benefit in terms of process integration because of very low temperature process capability (T < 110 degrees C). The high on/off switching with extremely low off current density utilizing the dynamic band alignment modulation at the WOx/ZnO stack can be a very useful element for future device applications, especially in monolithic 3D integration or flexible electronics.
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