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High Hole Mobility and Low Leakage Thin-Body (In)GaSb p-MOSFETs Grown on High-Bandgap AlGaSbopen access
- Authors
- Kim, Sang-Hyeon; Roh, Ilpyo; Han, Jae-Hoon; Geum, Dae-Myeong; Kim, Seong Kwang; Kang, Soo Seok; Kang, Hang-Kyu; Lee, Woo Chul; Kim, Seong Keun; Hwang, Do Kyung; Song, Yun Heub; Song, Jin Dong
- Issue Date
- Nov-2021
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Keywords
- GaSb; III-V; InGaAs passivation; ultra-thin-body (UTB)
- Citation
- IEEE Journal of the Electron Devices Society, v.9, pp.42 - 48
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE Journal of the Electron Devices Society
- Volume
- 9
- Start Page
- 42
- End Page
- 48
- Abstract
- In this study, we demonstrated low leakage current and high mobility thin body (In)GaSb p-FETs. Through the optimization of the V/III ratio during the epitaxial growth, we achieved a highly insulating bottom Al0.95Ga0.05Sb barrier, which eliminates the junction leakage. We also suppressed the interface trap-assisted surface leakage current by introducing In0.53Ga0.47As surface passivation on the GaSb channel. Furthermore, GaSb/InGaSb/GaSb quantum well (QW) channel structure provided significant improvement in effective mobility ( {mu }-{mathrm{ eff}} ) characteristics. As a result, the fabricated devices showed the lowest off-leakage current ( {I} -{mathrm{ off}} ), subthreshold slope ( {S}. {S}.) and high mu -{mathrm{ eff}} among reported GaSb p-MOSFETs.
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Related Researcher
- Song, Yun Heub
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)