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Improvement of Plasma Resistance of Anodic Aluminum-Oxide Film in Sulfuric Acid Containing Cerium(IV) Ionopen access
- Authors
- So, Jongho; Choi, Eunmi; Kim, Jin-Tae; Shin, Jae-Soo; Song, Je-Boem; Kim, Minjoong; Chung, Chin-Wook; Yun, Ju-Young
- Issue Date
- Feb-2020
- Publisher
- MDPI
- Keywords
- plasma corrosion; plasma etch rate; anodic aluminum oxide; cerium(IV)
- Citation
- COATINGS, v.10, no.2, pp.1 - 10
- Indexed
- SCIE
SCOPUS
- Journal Title
- COATINGS
- Volume
- 10
- Number
- 2
- Start Page
- 1
- End Page
- 10
- ISSN
- 2079-6412
- Abstract
- The parts of equipment in a process chamber for semiconductors are protected with an anodic aluminum-oxide (AAO) film to prevent plasma corrosion. We added cerium(IV) ions to sulfuric acid in the anodizing of an AAO film to improve the plasma corrosion resistance, and confirmed that the AAO film thickness increased by up to similar to 20% when using 3 mM cerium(IV) ions compared with general anodizing. The alpha-Al2O3 phase increased with increasing cerium(IV) ion concentration. The breakdown voltage and etching rate improved to similar to 35% and 40%, respectively. The film's performance regarding the generation of contamination particles reduced by similar to 50%.
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Collections - 서울 공과대학 > 서울 전기공학전공 > 1. Journal Articles
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Related Researcher
- Chung, Chin Wook
- COLLEGE OF ENGINEERING (MAJOR IN ELECTRICAL ENGINEERING)