Rapid growth of NiSx by atomic layer infiltration and its application as an efficient counter electrode for dye-sensitized solar cells
- Authors
- Cho, Sangho; Kim, Hongbum; Sung, Myung Mo
- Issue Date
- Sep-2019
- Publisher
- ELSEVIER SCIENCE INC
- Keywords
- Atomic layer infiltration; Nickel sulfide; Counter electrode; Dye-sensitized solar cell
- Citation
- JOURNAL OF INDUSTRIAL AND ENGINEERING CHEMISTRY, v.77, pp.470 - 476
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF INDUSTRIAL AND ENGINEERING CHEMISTRY
- Volume
- 77
- Start Page
- 470
- End Page
- 476
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/147238
- DOI
- 10.1016/j.jiec.2019.05.013
- ISSN
- 1226-086X
- Abstract
- Nickel sulfide (NiSx) was grown by atomic layer infiltration using bis(dimethylamino-2-methyl-2-butoxo)nickel(II) [Ni(dmamb)(2)] and hydrogen sulfide (H2S) as a metal precursor and a sulfur source. The steady-state growth rate of the film was 3.7 angstrom/cycles at 160-190 degrees C which was much faster compared to those by conventional atomic layer deposition method (<0.7 angstrom/cycles). This nickel sulfide thin films were characterized by taking X-ray photoelectron spectroscopy, scanning electron microscopy, X-ray diffraction, and hall measurements. The deposited films on Si wafer was single-phase polycrystalline with multiple domains. The NiSx film grown on fluorine-doped tin oxide (FPO)-coated glass was applied to a counter electrode in dye-sensitized solar cells, which performed a high catalytic activity for the reduction of I-3(-) to I- and the comparable cell efficiency of 7.12% with cells using conventional Pt-coated FPO counter electrode.
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